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| BYT 11-600 1000 FAST RECOVERY RECTIFIER DIODES SOFT RECOVERY VERY HIGH VOLTAGE SMALL RECOVERY CHARGE APPLICATIONS ANTISATURATION DIODES FOR TRANSISTOR BASE DRIVE SNUBBER DIODES ABSOLUTE RATINGS (limiting values) Symbol IFRM IF (AV) IFSM Ptot Tstg Tj TL Parameter Repetive Peak Forward Current Average Forward Current * Surge non Repetitive Forward Current Power Dissipation * Storage and Junction Temperature Range Maximum Lead Temperature for Soldering during 10s at 4mm from Case tp 20s Ta = 75C = 0.5 tp = 10ms Sinusoidal Ta = 55C F 126 (Plastic) Value 20 1 35 1.25 - 55 to + 150 - 55 to + 150 230 Unit A A A W C C Symbol VRRM Parameter 600 Repetitive Peak Reverse Voltage 600 BYT 11800 800 1000 1000 Unit V THERMAL RESISTANCE Symbol Rth (j - a) Junction-ambient* Parameter Value 60 Unit C/W * On infinite heatsink with 10mm lead length. November 1994 1/4 BYT11-600 1000 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Synbol IR VF Tj = 25C Tj = 25C Test Conditions VR = VRRM IF = 1A Min. Typ. Max. 20 1.3 Unit A V RECOVERY CHARACTERISTICS Symbol trr Tj = 25C Test Conditions IF = 0.5A IR = 1A Irr = 0.25A Min. Typ. Max. 100 Unit ns To evaluate the conduction losses use the following equations: VF = 1.1 + 0.075 IF P = 1.1 x IF(AV) + 0.075 IF2(RMS) F i gu re 1. Ma xi mu m av era ge power dissipation versus average forward current. Figure 2. Average forward current versus ambient temperature. Figure 3. Thermal resistance versus lead length. Mounting n1 INFINITE HEATSINK Mounting n2 PRINTED CIRCUIT Test point of tlead Soldering 2/4 BYT 11-600 1000 Figure 5. Peak forward current versus peak forward voltage drop (maximum values). Figure 4. Transient thermal impedance junction-ambient for mounting n2 versus pulse duration (L = 10 mm). Figure 6. Capacitance versus reverse applied voltage Figure 7. Non repetitive surge peak current versus number of cycles 3/4 BYT11-600 1000 PACKAGE MECHANICAL DATA F 126 (Plastic) B note 1 E A B E note 1 / OC / OD note 2 OD / DIMENSIONS REF. A B C D E Millimeters Min. 6.05 26 2.95 0.76 3.05 0.86 1.27 Max. 6.35 Inches Min. 0.238 1.024 0.116 0.029 0.120 0.034 0.050 Max. 0.250 NOTES 1 - The lead diameter D is not controlled over zone E 2 - The minimum axial lengh within which the device may be placed with its leads bent at right angles is 0.59"(15 mm) Cooling method: by convection (method A) Marking: type number ring at cathode end Weight: 0.4g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1994 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - United Kingdom - U.S.A. 4/4 |
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